? 2000 ixys all rights reserved 1 - 2 hiperfred tm epitaxial diode with soft recovery features international standard package planar passivated chips very short recovery time extremely low switching losses low i rm -values soft recovery behaviour epoxy meets ul 94v-0 applications antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode in converters and motor control circuits rectifiers in switch mode power supplies (smps) inductive heating uninterruptible power supplies (ups) ultrasonic cleaners and welders advantages avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low i rm reduces: - power dissipation within the diode - turn-on loss in the commutating switch dimensions see outlines.pdf c a a = anode, c = cathode, tab = cathode c a to-220 ac c (tab) pulse test: pulse width = 5 ms, duty cycle < 2.0 % pulse width = 300 s, duty cycle < 2.0 % data according to iec 60747 and per diode unless otherwise specified ixys reserves the right to change limits, test conditions and dimensions. dsep 15-03a i fav = 15 a v rrm = 300 v t rr = 30 ns v rsm v rrm type v v 300 300 dsep 15-03a symbol conditions maximum ratings i frms 35 a i favm t c = 135c; rectangular, d = 0.5 15 a i fsm t vj = 45c; t p = 10 ms (50 hz), sine 140 a e as t vj = 25c; non-repetitive 0.8 mj i as = 2.5 a; l = 180 h i ar v a = 1.5 v r typ. ; f = 10 khz; repetitive 0.3 a t vj -55...+175 c t vjm 175 c t stg -55...+150 c p tot t c = 25c 95 w m d mounting torque 0.4...0.6 nm weight typical 2 g symbol conditions characteristic values typ. max. i r t vj = 25c v r = v rrm 100 a t vj = 150c v r = v rrm 0.5 ma v f i f = 15 a; t vj = 150c 1.21 v t vj = 25c 1.68 v r thjc 1.6 k/w r thch 0.5 k/w t rr i f = 1 a; -di/dt = 100 a/ s; 30 ns v r = 30 v; t vj = 25c i rm v r = 100 v; i f = 25 a; -di f /dt = 100 a/ s2.7a t vj = 100c 025
? 2000 ixys all rights reserved 2 - 2 dsep 15-03a note: fig. 2 to fig. 6 shows typical values 200 600 1000 0 400 800 30 40 50 60 70 80 0.00001 0.0001 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 04080120160 0.6 0.8 1.0 1.2 1.4 k f t vj c -di f /dt t s k/w 0 200 400 600 800 1000 4 6 8 10 12 14 0.60 0.65 0.70 0.75 0.80 0.85 v fr di f /dt v 200 600 1000 0 400 800 0 5 10 15 20 100 1000 0 100 200 300 400 500 012 0 10 20 30 40 i rm q r i f a v f -di f /dt -di f /dt a/ m s a v nc a/ m s a/ m s t rr ns t fr a/ m s s dsep 15-03a z thjc t vj = 150 c t vj = 100 c t vj = 25 c i f = 30a i f = 15a i f = 7.5a t vj = 100 c v r = 150v t vj = 100 c v r = 150v t vj = 100 c v r = 150v t vj = 100 c i f = 15a v fr t fr i rm q r i f = 30a i f = 15a i f = 7.5a i f = 30a i f = 15a i f = 7.5a fig. 3 peak reverse current i rm versus -di f /dt fig. 2 reverse recovery charge q r versus -di f /dt fig. 1 forward current i f versus v f fig. 4 dynamic parameters q r , i rm versus t vj fig. 5 recovery time t rr versus -di f /dt fig. 6 peak forward voltage v fr and t fr versus di f /dt fig. 7 transient thermal resistance junction to case constants for z thjc calculation: ir thi (k/w) t i (s) 1 0.908 0.005 2 0.35 0.0003 3 0.342 0.017 025
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